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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1551 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) *High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V; IC= -5A) APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE -80 V -80 V -7 V -10 A -20 A 2 W UNIT .cn mi e IC Collector Current-Continuous ICM Collector Current-Pulse Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Junction Temperature 30 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1551 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 B -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50A; IE= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA B -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -100 A IEBO Emitter Cutoff Current hFE DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product w w. w .cn mi cse is IC= -5A; VCE= -3V 1000 IE= 0; VCB= -10V; ftest= 1MHz IE= 0.5A; VCE= -5V; ftest= 10MHz VEB= -5V; IC= 0 -3 mA 20000 90 pF 12 MHz isc Websitewww.iscsemi.cn 2 |
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